UV light source models have power 350W, 500W, 1000W, 2000W, 3500W, 5000W.
Exposure source size: 4 “, 6”, 8 “, 10″, 12 ”
Wavelength: NUV (including 365nm, 400nm, 435nm),
Half-width parallel light source: 1.5 to 2.5 degrees (depending on the light aperture)
Uniformity: -3 to + 5%
High pressure mercury lamp and power supply

With variable magnification lens easy alignment operation, the standard magnification 50X-300X,
CCD imaging system with two LCD screens
Coaxial lighting with LED light or ring light
Two observations pitch 4cm-15cm,
Optional lens scanning station to quickly move the camera,
Optional on the back of the alignment imaging system

Mask vacuum cups: the suction or downdraft 4 “, 5”, 6 “, 7″, 9 ”
Wafer Vacuum Chuck: 2 “, 4”, 6 “, 8” round or square
A mask wafer level correction function
Exposure mode vacuum contact and proximity, size adjustable vacuum suction force
X, Y axis adjustment 10mm. Adjustment resolution 2um
Z-axis adjustable 5mm, micrometer resolution 1um
Open to take place on a reticle substrate

Mining PLC semi-automatic operating system,
You can switch between manual and automatic mode
Operational procedures: counter substrate (keys) on the mask off, the lens alignment operation moved to do, under the pressure of the mask, the lens moved out of the light source exposure (timing) (key), the light source is removed take on the open mask, take substrates.
Exposure shutter control: timer control 0.1-999 seconds, or energy control: 0.1 ~ 9000mJ / cm2,

With four shockproof cushion, with adjustable feet, moving wheels, aluminum extrusion and aluminum frame plus yellow PVC anti-static coating machines, operation and maintenance of a number of open windows and doors and windows

Accuracy and yield depend on the exposure time and the exposure of different speeds up to three pieces per minute
Mining vacuum contact exposure pattern analysis best to within 1um (positive resist thickness 1um) Mining proximity exposure by setting the wafer and reticle optimal spacing of about 3 ~ 5um